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FESEM

Explore the technical specifications and detailed description of this equipment below.

FESEM
Quick Information
  • Rate / Slot To be decided
  • Date of Purchase 2024-09-17
  • Custodian Name N/A
  • Operator Name Mr Jahar Mahala
  • Official Link Visit Website

Description

FE-SEM is typically performed in a high vacuum because gas molecules tend to disturb the electron beam and the emitted secondary and backscattered electrons used for imaging. In addition to FE-SEM, energy-dispersive X-ray (EDX) was conducted on the same specimens for further analysis. EDX is an X-ray technique used to identify the elemental composition of materials. These systems are attachments to electron microscopy instruments where the imaging capability of the microscope identifies the specimens of interest

Technical Specifications

 The ability to examine smaller-area contamination spots at electron accelerating voltages compatible with energy dispersive spectroscopy (EDS).
 Reduced penetration of low-kinetic-energy electrons probes closer to the immediate material surface.
 High-quality, low-voltage images with negligible electrical charging of samples (accelerating voltages ranging from 0.5 to 30 kilovolts).
 Essentially no need for placing conducting coatings on insulating materials

 Semiconductor device cross section analyses for gate widths, gate oxides, film thicknesses, and construction details
 Advanced coating thickness and structure uniformity determination
 Small contamination feature geometry and elemental composition measurement
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